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| HMC-MDB171 v00.0907 GaAs MMIC I/Q MIXER 35 - 45 GHz Features Wide IF Bandwidth: DC - 5 GHz High Image Rejection: 25 dB High LO to RF Isolation Passive: No DC Bias Required Die Size: 1.5 x 2.0 x 0.1 mm Typical Applications This HMC-MDB171 is ideal for: * Point-to-Point Radios * Military Radar, ECM & EW MIXERS - I/Q MIXERS / IRM - CHIP * Test & Measurement Equipment * SATCOM * Sensors Functional Diagram General Description The HMC-MDB171 is a monolithic I/Q Mixer which can be used as either an image reject mixer (IRM) or a single sideband upconverter. This passive MMIC mixer is fabricated with GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology. For downconversion applications, an external quadrature hybrid can be used to select the desired sideband while rejecting image signals. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB171 I/Q MMIC Mixer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations,* TA = 25 C, IF = 3 GHz, LO = +16 dBm Parameter Frequency Range, RF & LO Frequency Range, IF Conversion Loss with External Hybrid Conversion Loss with out External Hybrid 1 dB Compression (Input) Image Rejection LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) *Unless otherwise indicated, all measurements are from probed die 20 30 15 20 Min. Typ. 35 - 45 DC - 5 8 12.5 8 25 35 20 25 17 11 Max. Units GHz GHz dB dB dB dB dB dB dB dBm X-8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-MDB171 v00.0907 GaAs MMIC I/Q MIXER 35 - 45 GHz Downconverter Conversion Loss Absolute Maximum Ratings Maximum Channel Temperature Storage Temperature Operating Temperature 180 C -65 C to 150 C -55 C to 85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note 1: Measured Performance Characteristics (TOP = 25C) Note 2: Single side band measurement without 90hybrid, and second IF port terminated. RF=35-45 GHz LO=32-42 GHz IF=3 GHz PLO=+16 dBm PRF=-20 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com X-9 MIXERS - I/Q MIXERS / IRM - CHIP HMC-MDB171 v00.0907 GaAs MMIC I/Q MIXER 35 - 45 GHz Outline Drawing MIXERS - I/Q MIXERS / IRM - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" X - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-MDB171 v00.0907 GaAs MMIC I/Q MIXER 35 - 45 GHz Application Circuits Application circuit 1 shows the mixer equivalent circuit. Application Circuit 2 depicts the mixer with a 90 hybrid used to achieve signal image rejection. All RF parameters are specified with an ideal 90 hybrid on IF output ports. Conversion loss is measured (on wafer) at IF1 and/or IF2 (Application Circuit 1) with the second IF port terminated into 50 ohms. Three dB is then added to compensate for an ideal hybrid. The IP3 is stated as an input IP3 number and is obtained via a two-tone measurement. Application Circuit 1 Application Circuit 2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com X - 11 MIXERS - I/Q MIXERS / IRM - CHIP |
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